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symbol max p-channel units v ds v v gs v i dm i ar a e ar mj t j , t stg c thermal characteristics: n-channel and p-channe l symbol device typ ma x n-ch 25 30 c/w n-ch 66 80 c/w r jc n-ch 7 7.5 c/w p-ch 17 25 c/w p-ch 60 75 c/w r jc p-ch 4 5 c/w r ja maximum junction-to-ambient a maximum junction-to-case b steady-state parameter maximum junction-to-ambient a t 10s 40 8 6.3 21.6 20 avalanche current c pulsed drain current c -40 20 drain-source voltage 20 gate-source voltage absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel repetitive avalanche energy l=0.3mh c w 10 30 15 continuous drain current g t c =25c i d t c =100c r ja maximum junction-to-ambient a steady-state 29.4 t c =100c power dissipation b t c =25c p d steady-state junction and storage temperature range maximum junction-to-case b steady-state maximum junction-to-ambient a t 10s -55 to 175 power dissipation a t a =25c p dsm t a =70c 1.7 1.6 1.1 30 1 12 -55 to 175 -30 14 a w -6.3 -8 aod606 complementary enhancement mode field effect transistor features n-channel p-channel v ds (v) = 40v -40v i d = 8a (v gs =10v) -8a (v gs = -10v) r ds(on) r ds(on) < 33 m (v gs =10v) < 50 m (v gs = -10v) < 47 m (v gs =4.5v) < 70 m (v gs = -4.5v) 100% uis tested! general description the aod606 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used in h-bridge, inverters and other applications. -rohs compliant -halogen free* g1 d1/d2 s1 g2 s2 n-channel p -channel g1 t o-252-4 l d-pak t op view d1/d2 bottom view d s1 s2 g2 alpha & omega semiconductor, ltd. www.aosmd.com
aod606 symbol min typ max units bv dss 40 v 1 t j =55c 5 i gss 100 na v gs(th) 1.5 2.3 3 v i d(on) 30 a 27 33 t j =125c 39 52 37 47 m w g fs 25 s v sd 0.76 1 v i s 8 a i sm 30 a c iss 404 pf c oss 95 pf c rss 37 pf r g 2.7 w q g (10v) 9.2 nc q g (4.5v) 4.5 nc q gs 1.6 nc q gd 2.6 nc t d(on) 3.5 ns t r 6 ns t d(off) 13.2 ns t f 3.5 ns t rr 22.9 ns q rr 18.3 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =10ma, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =8a reverse transfer capacitance i f =8a, di/dt=100a/ m s v gs =0v, v ds =20v, f=1mhz switching parameters n-channel mosfet electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds =v gs , i d =250 m a v ds =32v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m w v gs =4.5v, i d =6a i s =1a, v gs =0v v ds =5v, i d =8a v gs =10v, v ds =20v, r l =2.5 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =20v, i d =8a gate source charge gate drain charge total gate charge pulsed body-diode current c body diode reverse recovery charge i f =8a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175c may be used if the pcb allow s it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =175c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. g. the maximum current rating is limited by bond-wi res. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25c. the soa curve provides a single pulse rating. *this device is guaranteed green after data code 8x 11 (sep 1 st 2008). rev5: sep. 2008 alpha & omega semiconductor, ltd. www.aosmd.com
aod606 n-channel mosfet typical electrical and thermal cha racteristics 0 5 10 15 20 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 20 25 30 35 40 45 50 0 4 8 12 16 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v i d =6a v gs =10v i d =8a 10 20 30 40 50 60 70 80 90 100 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =8a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5v 4v 10v 4.5v 5v alpha & omega semiconductor, ltd. www.aosmd.com
aod606 n-channel mosfet typical electrical and thermal cha racteristics 0 2 4 6 8 10 0 2 4 6 8 10 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 35 40 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 m s 10ms 1ms dc r ds(on) limited t j(max) =175c, t a =25c v ds =20v i d =8a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =7.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
aod606 n-channel mosfet typical electrical and thermal cha racteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =30c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 5 10 15 20 25 30 35 40 45 50 0.000001 0.00001 0.0001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current t a =150c 0 5 10 15 20 25 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 2 4 6 8 10 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) dd d a v bv i l t - = t a =25c 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
aod606 symbol min typ max units bv dss -40 v -1 t j =55c -5 i gss 100 na v gs(th) -1.5 -1.8 -3 v i d(on) -30 a 35 50 t j =125c 62 55 70 m w g fs 16 s v sd -0.75 -1 v i s -8 a i sm -30 a c iss 657 pf c oss 143 pf c rss 63 pf r g 6.5 w q g (10v) 14.1 nc q g (4.5v) 7 nc q gs 2.2 nc q gd 4.1 nc t d(on) 8 ns t r 12.2 ns t d(off) 24 ns t f 12.5 ns t rr 23.2 ns q rr 18.2 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =-8a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =-10ma, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-8a reverse transfer capacitance i f =-8a, di/dt=100a/ m s p-channel mosfet electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds =v gs i d =-250 m a v ds =-32v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m w v gs =-4.5v, i d =-4a i s =-1a,v gs =0v v ds =-5v, i d =-8a turn-on rise time turn-off delaytime v gs =-10v, v ds =-20v, r l =2.5 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge (4.5v) gate source charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =-20v, f=1mhz gate drain charge total gate charge (10v) v gs =-10v, v ds =-20v, i d =-8a pulsed body-diode current c a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175c may be used if the pcb allow s it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =175c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. g. the maximum current rating is limited by bond-wi res. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25c. the soa curve provides a single pulse rating. *this device is guaranteed green after data code 8x 11 (sep 1 st 2008). rev5: sep. 2008 alpha & omega semiconductor, ltd. www.aosmd.com
aod606 p-channel mosfet electrical characteristics (t j =25c unless otherwise noted) i d =-10ma, v gs =0v 0 5 10 15 20 25 0 1 2 3 4 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 20 30 40 50 60 70 80 0 4 8 12 16 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.80 1.00 1.20 1.40 1.60 1.80 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-4.5v i d =-6a v gs =-10v i d =-8a 20 40 60 80 100 120 2.00e+00 4.00e+00 6.00e+00 8.00e+00 1.00e+01 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-8a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-4v -3.5v -6v -10v -4.5v -5v -3v alpha & omega semiconductor, ltd. www.aosmd.com
aod606 p-channel mosfet electrical characteristics (t j =25c unless otherwise noted) i d =-10ma, v gs =0v 0 2 4 6 8 10 0 4 8 12 16 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 m s 1ms dc r ds(on) limited t j(max) =175c, t a =25c 10ms v ds =-20v i d =-8a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
aod606 p-channel mosfet electrical characteristics (t j =25c unless otherwise noted) i d =-10ma, v gs =0v 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =25c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 50 60 70 80 90 100 0.000001 0.00001 0.0001 time in avalanche, t a (s) figure 12: single pulse avalanche capability -i d (a), peak avalanche current t a =150c 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 2 4 6 8 10 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating -i d (a) dd d a v bv i l t - = t a =25c 0 10 20 30 40 50 60 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
aod606 n-channel - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar alpha & omega semiconductor, ltd. www.aosmd.com
aod606 p-channel vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) alpha & omega semiconductor, ltd. www.aosmd.com

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